Defence in the field of Semiconductor Technology M. Sc. (Tech.) Zhen Zhu

Title of the thesis is “Low-Temperature Plasma-Enhanced Atomic Layer Deposition of Silicon Dioxide and Aluminum Oxide”

Future Needs Low-temperature Atomic Layer Deposition

The process temperature of atomic layer deposition is modest and often in the range of 200-350 °C. However, these temperatures are not acceptable for novel applications such as organic light-emitted diode and flexible devices due to the low thermal-tolerance of materials. This requests to find a solution that combines a low-temperature process with good film quality. To answer the above key subject, this thesis demonstrates various processes of plasma-enhanced atomic layer deposition at 90 °C.

Furthermore, this thesis gives an insight into the effect of plasma parameters on the film properties and broadens the basic understanding of plasma processes in atomic layer deposition.

Last but not least, the study conducted in the thesis indicates that the optimized processes are directly applicable to the applications where thermally sensitive materials are used.

Opponent: Professor Henrik Pedersen, Linköping University, Sweden

Supervisor:  Professor Hele Savin, Aalto University School of Electrical Engineering, Department of Electronics and Nanoengineering.

Electronic thesis

Contact information: Zhen Zhu, Department of Electronics and Nanoengineering, [email protected], +358505122787

The dissertation is publicly displayed 10 days before the defence at the noticeboard of the School of Electrical Engineering in Maarintie 8, Espoo.

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