Department of Electronics and Nanoengineering

Optoelectronics

The Optoelectronics group is part of the Department of Electronics and Nanoengineering, Aalto University. The group is located in the nanofabrication research center Micronova. Optoelectronics group conducts research in the areas of semiconductor materials, optoelectronic components and photonics (e.g. optical fibers). The research is done in collaboration with foreign universities, VTT Microelectronics and industry. Optoelectronics group teaches the first year physics courses for the degree programmes AUT, BioIT and EST in addition to the teaching of NanoRAD majors.

(Figure: Christoffer Kauppinen, Sabbir Ahmed Khan, Jonas Sundqvist, Dmitry B. Suyatin, Sami Suihkonen, Esko I. Kauppinen, and Markku Sopanen, "Atomic layer etching of gallium nitride" Journal of Vacuum Science & Technology A 35, 060603 (2017); doi: 10.1116/1.4993996)
Etched GaN surface
"Atomic layer etching of gallium nitride"

The main research topics are:

  • Dilute nitrides and SESAM structures
  • GaN technology
  • HVPE 
  • LED-microarrays
  • Quantum dot structures
  • Novel LED structures

Latest publications

A Highly Sensitive and Robust GaN Ultraviolet Photodetector Fabricated on 150-mm Si (111) Wafer

Ravindra Singh Pokharia, Ritam Sarkar, Shivam Singh, Swarup Deb, Sami Suihkonen, Jori Lemettinen, Subhabrata Dhar, Dinesh Kabra, Apurba Laha 2021 IEEE Transactions on Electron Devices

Epi-Gd₂O₃-MOSHEMT: A Potential Solution Toward Leveraging the Application of /Si AlGaN/GaNHEMT With Improved ION/IOFF Operating at 473 K

Ritam Sarkar, Bhanu B. Upadhyay, Swagata Bhunia, Ravindra S. Pokharia, Dhiman Nag, S. Surapaneni, Jori Lemettinen, Sami Suihkonen, Philipp Gribisch, Hans Jorg Osten, Swaroop Ganguly, Dipankar Saha, Apurba Laha 2021 IEEE Transactions on Electron Devices

Metalorganic vapor phase epitaxy of wurtzite InP nanowires on GaN

Christoffer Kauppinen, Tuomas Haggren, Harri Lipsanen, Markku Sopanen 2020 Applied Physics Letters

MOVPE growth of GaN on patterned 6-inch Si wafer

Iurii Kim, Joonas Holmi, Ramesh Raju, Atte Haapalinna, Sami Suihkonen 2020 Journal of Physics Communications

2D electrons and 2D plasmons in AlGaN/GaN nanostructure under highly non-equilibrium conditions

L. A. Loginov, V. A. Shalygin, M. D. Moldavskaya, M. Ya Vinnichenko, D. A. Firsov, K. V. Maremyanin, A. V. Sakharov, E. E. Zavarin, D. S. Arteev, W. V. Lundin, Christoffer Kauppinen, Sami Suihkonen 2020 Journal of Physics: Conference Series

Atomic Layer Deposition of PbS Thin Films at Low Temperatures

Georgi Popov, Goran Bačić, Miika Mattinen, Toni Manner, Hannu Lindström, Heli Seppänen, Sami Suihkonen, Marko Vehkamäki, Marianna Kemell, Pasi Jalkanen, Kenichiro Mizohata, Jyrki Räisänen, Markku Leskelä, Hanna Maarit Koivula, Seán T. Barry, Mikko Ritala 2020 Chemistry of Materials

MOCVD Al(Ga)N Insulator for Alternative Silicon-On-Insulator Structure

Glenn Ross, Ville Luntinen, Mikael Broas, Sami Suihkonen, Turkka Tuomi, Aapo Lankinen, Andreas Danilewsky, Markku Tilli, Mervi Paulasto-Kröckel 2020 Proceedings - 2020 IEEE 8th Electronics System-Integration Technology Conference, ESTC 2020

Fabrication of gallium nitride and nitrogen doped single layer graphene hybrid heterostructures for high performance photodetectors

Sanjay Sankaranarayanan, Prabakaran Kandasamy, Ramesh Raju, Baskar Krishnan 2020 Scientific Reports

Metalorganic chemical vapor deposition of aluminum nitride on vertical surfaces

Elmeri Österlund, Sami Suihkonen, Glenn Ross, Altti Torkkeli, Heikki Kuisma, Mervi Paulasto-Kröckel 2020 Journal of Crystal Growth
More information on our research in the Research database.
Research database

Contact:
Associate Professor Markku Sopanen
Email: markku.sopanen at aalto.fi
Tel.: +358 50 3656 356

Postal address:
Department of Electronics and Nanoengineering
Aalto University School of Electrical Engineering
P.O. Box 13500, 00076 Aalto, Finland

Visiting address:
Micronova, 4th floor, room 4188
Tietotie 3, 02150 Espoo

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