Department of Electronics and Nanoengineering

Optoelectronics

The Optoelectronics group is part of the Department of Electronics and Nanoengineering, Aalto University. The group is located in the nanofabrication research center Micronova. Optoelectronics group conducts research in the areas of semiconductor materials, optoelectronic components and photonics (e.g. optical fibers). The research is done in collaboration with foreign universities, VTT Microelectronics and industry. Optoelectronics group teaches the first year physics courses for the degree programmes AUT, BioIT and EST in addition to the teaching of NanoRAD majors.

(Figure: Christoffer Kauppinen, Sabbir Ahmed Khan, Jonas Sundqvist, Dmitry B. Suyatin, Sami Suihkonen, Esko I. Kauppinen, and Markku Sopanen, "Atomic layer etching of gallium nitride" Journal of Vacuum Science & Technology A 35, 060603 (2017); doi: 10.1116/1.4993996)
Etched GaN surface
"Atomic layer etching of gallium nitride"

The main research topics are:

  • Dilute nitrides and SESAM structures
  • GaN technology
  • HVPE 
  • LED-microarrays
  • Quantum dot structures
  • Novel LED structures

Latest publications

Metalorganic vapor phase epitaxy of wurtzite InP nanowires on GaN

Christoffer Kauppinen, Tuomas Haggren, Harri Lipsanen, Markku Sopanen 2020 Applied Physics Letters

MOVPE growth of GaN on patterned 6-inch Si wafer

Iurii Kim, Joonas Holmi, Ramesh Raju, Atte Haapalinna, Sami Suihkonen 2020 Journal of Physics Communications

2D electrons and 2D plasmons in AlGaN/GaN nanostructure under highly non-equilibrium conditions

L. A. Loginov, V. A. Shalygin, M. D. Moldavskaya, M. Ya Vinnichenko, D. A. Firsov, K. V. Maremyanin, A. V. Sakharov, E. E. Zavarin, D. S. Arteev, W. V. Lundin, Christoffer Kauppinen, Sami Suihkonen 2020 Journal of Physics: Conference Series

Metalorganic chemical vapor deposition of aluminum nitride on vertical surfaces

Elmeri Österlund, Sami Suihkonen, Glenn Ross, Altti Torkkeli, Heikki Kuisma, Mervi Paulasto-Kröckel 2020 Journal of Crystal Growth

Site-specific growth of oriented ZnO nanocrystal arrays

Rekha Bai, Dinesh Pandya, Sujeet Chaudhary, Veer Dhaka, Vladislav Khayrudinov, Jori Lemettinen, Christoffer Kauppinen, Harri Lipsanen 2019 Beilstein Journal of Nanotechnology

In-situ annealing characterization of atomic-layer-deposited Al2O3 in N2 , H2 and vacuum atmospheres

Mikael Broas, Jori Lemettinen, Timo Sajavaara, Markku Tilli, Vesa Vuorinen, Sami Suihkonen, Mervi Paulasto-Kröckel 2019 Thin Solid Films

P-Channel GaN transistor based on p-GaN/AlGaN/GaN on Si

Nadim Chowdhury, Jori Lemettinen, Qingyun Xie, Yuhao Zhang, Nitul S. Rajput, Peng Xiang, Kai Cheng, Sami Suihkonen, Han Wui Then, Tomas Palacios 2019 IEEE Electron Device Letters

Nitrogen-polar polarization-doped field-effect transistor based on Al0.8Ga0.2N/AlN on SiC with drain current over 100 mA/mm

Jori Lemettinen, Nadim Chowdhury, Hironori Okumura, Iurii Kim, Sami Suihkonen, Tomas Palacios 2019 IEEE Electron Device Letters

Effects of indium flow rate on the structural, morphological, optical and electrical properties of InGaN layers grown by metal organic chemical vapour deposition

K. Prabakaran, Ramesh Raju, P. Arivazhagan, M. Jayasakthi, S. Sanjay, S. Surender, S. Pradeep, M. Balaji, K. Baskar 2019 Journal of Alloys and Compounds

Influence of InGaN interlayer thickness on GaN layers grown by metal organic chemical vapour deposition

K. Prabakaran, M. Jayasakthi, S. Surender, S. Pradeep, S. Sanjay, Raju Ramesh, M. Balaji, K. Baskar 2019 APPLIED PHYSICS A-MATERIALS SCIENCE AND PROCESSING
More information on our research in the Research database.
Research database

Contact:
Associate Professor Markku Sopanen
Email: markku.sopanen at aalto.fi
Tel.: +358 50 3656 356

Postal address:
Department of Electronics and Nanoengineering
Aalto University School of Electrical Engineering
P.O. Box 13500, 00076 Aalto, Finland

Visiting address:
Micronova, 4th floor, room 4188
Tietotie 3, 02150 Espoo

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