Optoelektroniikka

Optoelektroniikan ryhmä on osa Aalto-yliopiston elektroniikan ja nanotekniikan laitosta. Ryhmä toimii nanovalmistuksen Micronova-tutkimuskeskuksessa. Optoelektroniikan ryhmä tutkii puolijohdemateriaaleja, optoelektronisia komponentteja ja fotoniikkaa (esim. optisia kuituja). Tutkimusta tehdään yhteistyössä ulkomaisten yliopistojen, VTT:n ja teollisuuden kanssa. Optoelektroniikan ryhmän vastuulla on myös ensimmäisen vuoden fysiikan opetus AUT-, BioIT- ja EST-ohjelmissa sekä NanoRAD-maisteriohjelman opetus kokonaisuudessaan.
Etched GaN surface

Group members

Hanne Ludvigsen

Dept Electronics and Nanoeng.
Vanhempi yliopistonlehtori
Markku Sopanen

Markku Sopanen

Dept Electronics and Nanoeng.
Professori (Associate Professor)
Sami Suihkonen

Sami Suihkonen

Dept Electronics and Nanoeng.
Akatemiatutkija

Iurii Kim

Dept Electronics and Nanoeng.
Tohtorikoulutettava

Ramesh Raju

Dept Electronics and Nanoeng.
Staff Scientist

Latest publications

Markku Sopanen Group, Dept Electronics and Nanoeng.

Epi-Gd2O3/AlGaN/GaN MOS HEMT on 150 mm Si wafer: A fully epitaxial system for high power application

Publishing year: 2019 Applied Physics Letters
Markku Sopanen Group, Dept Electronics and Nanoeng.

Nitrogen-polar polarization-doped field-effect transistor based on Al0.8Ga0.2N/AlN on SiC with drain current over 100 mA/mm

Publishing year: 2019 IEEE Electron Device Letters
Sähkötekniikan ja automaation laitos, Dept Electronics and Nanoeng., Markku Sopanen Group, Electronics Integration and Reliability

In-situ annealing characterization of atomic-layer-deposited Al2O3 in N2 , H2 and vacuum atmospheres

Publishing year: 2019 Thin Solid Films
Dept Electronics and Nanoeng., Markku Sopanen Group

P-Channel GaN transistor based on p-GaN/AlGaN/GaN on Si

Publishing year: 2019 IEEE Electron Device Letters
Markku Sopanen Group, Dept Electronics and Nanoeng.

Structural, morphological, optical and electrical characterization of InGaN/GaN MQW structures for optoelectronic applications

Publishing year: 2019 Applied Surface Science
Markku Sopanen Group, Dept Electronics and Nanoeng.

Influence of InGaN interlayer thickness on GaN layers grown by metal organic chemical vapour deposition

Publishing year: 2019 APPLIED PHYSICS A-MATERIALS SCIENCE AND PROCESSING
Harri Lipsanen Group, Dept Electronics and Nanoeng., Markku Sopanen Group, Physical Charactristics of Surfaces and Interfaces, Kemian ja materiaalitieteen laitos

Aluminum Nitride Transition Layer for Power Electronics Applications Grown by Plasma-Enhanced Atomic Layer Deposition

Publishing year: 2019 Materials
Markku Sopanen Group, Dept Electronics and Nanoeng.

Point defects induced work function modulation of β-Ga2O3

Publishing year: 2019 Applied Surface Science
Dept Electronics and Nanoeng., Harri Lipsanen Group, Markku Sopanen Group, Aalto Nanofab

Site-specific growth of oriented ZnO nanocrystal arrays

Publishing year: 2019 Beilstein Journal of Nanotechnology
Markku Sopanen Group, Dept Electronics and Nanoeng.

Effects of indium flow rate on the structural, morphological, optical and electrical properties of InGaN layers grown by metal organic chemical vapour deposition

Publishing year: 2019 Journal of Alloys and Compounds
More information on our research in the Research database.
Research database
  • Julkaistu:
  • Päivitetty:
Jaa
URL kopioitu