Nanoscience and Advanced Materials
The Nanoscience and Advanced Materials group is part of the Department of Electronics and Nanoengineering, Aalto University. The group is located in the nanofabrication research center Micronova and has about 15 researchers. The group hosts Tekes-funded FiDiPro (Finland Distinguished Professor) Nasser Peyghambarian from University of Arizona jointly with University of Eastern Finland. Research is mainly funded by external sources, especially the National Technology Agency (Tekes), the Academy of Finland, EU, ESA and industry.
The group focuses in the research of nanomaterials, nanostructures and advanced materials for use especially in nanoelectronics and nanophotonics. Areas of current research activities include
- graphene and related 2D materials including CVD fabrication and devices). The group participates in the EU Graphene Flagship project, see http://graphene-flagship.eu/
- compound semiconductor nanowires
- energy efficiency especially in advanced LED and solar cell concepts. The group is involved in the Aalto Energy Efficiency program, see http://energyefficiency.aalto.fi/en/research/moppi/
- nanofabrication by atomic layer deposition (ALD), metalorganic chemical vapour deposition (MOCVD), electron beam lithography, focused ion beam lithography, self-assembly etc.
- micro-, nano- and optoelectronic devices based on semiconductors (GaN, GaAs, InP, Si...) and their nanostructures (such as quantum dots, nanowires and black silicon). Examples of devices are x-ray detectors, SERS sensors, THz emitters & detectors.
- materials characterisation (optical spectroscopy, Raman mapping, AFM, SEM. XRD, XRR, electrical measurements)
Latest publications
Deterministic Polymorphic Engineering of MoTe2 for Photonic and Optoelectronic Applications
Faisal Ahmed, Carlos Rodríguez-Fernández, Henry A. Fernandez, Yi Zhang, Abde Mayeen Shafi, Md Gius Uddin, Xiaoqi Cui, Hoon Hahn Yoon, Naveed Mehmood, Andreas C. Liapis, Lide Yao, Humeyra Caglayan, Zhipei Sun, Harri Lipsanen
2023
Advanced Functional Materials
High-quality hybrid dielectric materials for 2D electronics
Faisal Ahmed, Zhipei Sun
2023
Science China Materials
P-n junctions in planar GaAs nanowires
Bogdan R. Borodin, Prokhor A. Alekseev, Vladislav Khayrudinov, Evgeniy Ubyivovk, Yury Berdnikov, Nickolay Sibirev, Harri Lipsanen
2023
CrystEngComm
Gold Au(I)6 Clusters with Ligand-Derived Atomic Steric Locking: Multifunctional Optoelectrical Properties and Quantum Coherence
Sourov Chandra, Alice Sciortino, Susobhan Das, Faisal Ahmed, Arijit Jana, Jayoti Roy, Diao Li, Ville Liljeström, Hua Jiang, Leena Sisko Johansson, Xi Chen, Marco Cannas, Thalappil Pradeep, Bo Peng, Robin H.A. Ras, Zhipei Sun, Olli Ikkala, Fabrizio Messina
2023
ADVANCED OPTICAL MATERIALS
Highly Sensitive MoS2 Photodetectors Enabled with a Dry-Transferred Transparent Carbon Nanotube Electrode
Er-Xiong Ding, Peng Liu, Hoon Hahn Yoon, Faisal Ahmed, Mingde Du, Abde Mayeen Shafi, Naveed Mehmood, Esko I. Kauppinen, Zhipei Sun, Harri Lipsanen
2023
ACS Applied Materials and Interfaces
Direct Synthesis of Semiconducting Single-Walled Carbon Nanotubes Toward High-Performance Electronics
Peng Liu, Abu Taher Khan, Er Xiong Ding, Qiang Zhang, Zhenyu Xu, Xueyin Bai, Nan Wei, Ying Tian, Diao Li, Hua Jiang, Harri Lipsanen, Zhipei Sun, Esko I. Kauppinen
2023
Advanced Electronic Materials
Large-diameter indium antimonide microwire based broadband and robust optical switch
Fei Lou, Xiangpeng Cui, Xinyue Sheng, Chunyan Jia, Shuaiyi Zhang, Xia Wang, Vladislav Khayrudinov, Baitao Zhang, Shande Liu, Wing Yim Tam, Harri Lipsanen, He Yang, Jingliang He
2023
Science China: Physics, Mechanics and Astronomy
Unraveling Thermal Transport Properties of MoTe2 Thin Films Using the Optothermal Raman Technique
Carlos Rodriguez-Fernandez, Arttu Nieminen, F Ahmed, J Pietila, H Lipsanen, H Caglayan
2023
ACS applied materials & interfaces
Effect of atomic layer annealing in plasma-enhanced atomic layer deposition of aluminum nitride on silicon
H Seppanen, I Prozheev, C Kauppinen, S Suihkonen, K Mizohata, H Lipsanen
2023
JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY A
Strain Engineering for Enhancing Carrier Mobility in MoTe2 Field-Effect Transistors
Abde Mayeen Shafi, Md Gius Uddin, Xiaoqi Cui, Fida Ali, Faisal Ahmed, Mohamed Radwan, Susobhan Das, Naveed Mehmood, Zhipei Sun, Harri Lipsanen
2023
Advanced Science
Contact:
Professor Harri Lipsanen
Email: harri.lipsanen at aalto.fi
Tel.: +358 50 4339 740
Postal address:
Department of Electronics and Nanoengineering
Aalto University School of Electrical Engineering
P.O. Box 13500, 00076 Aalto, Finland
Visiting address:
Micronova, 4th floor, room 4186
Tietotie 3, 02150 Espoo
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