Department of Electronics and Nanoengineering

Electron Physics

The Electron Physics group is part of the Department of Electronics and Nanoengineering, Aalto University. Our research and education is focused on semiconductor materials and device physics. Our interests cover the whole scientific spectrum from fundamental physical phenomena to the search for cutting-edge applications in collaboration with leading industries. The current research activities include silicon-based photovoltaics and photodetectors, advanced characterization and nanofabrication techniques as well defect engineering in silicon. In addition to extensive facilities at Micronova Nanofabrication Centre, we use global research infrastructures in collaboration with our university and industry partners.
Hele Savin Group

Research topics

The group uses extensive clean room facitilites at Micronova Nanofabrication Centre for material research and device fabrication.

Latest publications

Understanding the multilevel phenomena that enables inorganic atomic layer deposition to provide barrier coatings for highly-porous 3-D printed plastic in vacuums

Nupur Bihari, Ismo T.S. Rauha, Giovanni Marin, Craig Ekstrum, Chathura de Alwis, Pierce J. Mayville, Hele Savin, Maarit Karppinen, Joshua M. Pearce 2023 Surface and Coatings Technology

Excellent Responsivity and Low Dark Current Obtained with Metal-Assisted Chemical Etched Si Photodiode

Kexun Chen, Olli Setälä, Xiaolong Liu, Behrad Radfar, Toni Pasanen, Michael Serue, Juha Heinonen, Hele Savin, Ville Vähänissi 2023 IEEE Sensors Journal

Efficient surface passivation of germanium nanostructures with 1% reflectance

John Fung, Joonas Isometsä, Juha Pekka Lehtiö, Toni Pasanen, Hanchen Liu, Oskari Leiviskä, Pekka Laukkanen, Hele Savin, Ville Vähänissi 2023 Nanotechnology

Black ultra-thin crystalline silicon wafers reach the 4n2 absorption limit – application to IBC solar cells

Moises Garin, Toni Pasanen, G. López, Ville Vähänissi, Kexun Chen, I. Martín , Hele Savin 2023 Small

Spatial uniformity of black silicon induced junction photodiode responsivity

Juha Heinonen, Antti Haarahiltunen, Ville Vähänissi, Toni P. Pasanen, Hele Savin, Juha Toivanen, Mikko A. Juntunen 2023 SPIE Conference Proceedings

Surface passivation of Germanium with ALD Al2O3: Impact of Composition and Crystallinity of GeOx Interlayer

Joonas Isometsä, Zahra Jahanshah Rad, John Fung, Hanchen Liu, Juha Pekka Lehtiö, Toni Pasanen, Oskari Leiviskä, Mikko Miettinen, P. Laukkanen, K. Kokko, Hele Savin, Ville Vähänissi 2023 Crystals

Is Carrier Mobility a Limiting Factor for Charge Transfer in Tio2/Si Devices? A Study by Transient Reflectance Spectroscopy

Ramsha Khan, Hannu Pasanen, Harri Ali-Löytty, Hussein Ayedh, Jesse Saari, Ville Vähänissi, Mika Valden, Hele Savin, Nikolai V. Tkachenko 2023 Surfaces and Interfaces

Chemical Excitation of Silicon Photoconductors by Metal-Assisted Chemical Etching

Shengyang Li, Hussein M. Ayedh, Marko Yli-Koski, Ville Vähänissi, Hele Savin, Jani Oksanen 2023 Journal of Physical Chemistry C

Comparison of SiNx-based Surface Passivation Between Germanium and Silicon

Hanchen Liu, Toni Pasanen, John Fung, Joonas Isometsä, Oskari Leiviskä, Ville Vähänissi, Hele Savin 2023 Physica Status Solidi (A) Applications and Materials Science

Plasma-enhanced atomic layer deposited SiO2 enables positive thin film charge and surface recombination velocity of 1.3 cm/s on germanium

Hanchen Liu, Toni Pasanen, Oskari Leiviskä, Joonas Isometsä, John Fung, Marko Yli-Koski, Mikko Miettinen, Pekka Laukkanen, Ville Vähänissi, Hele Savin 2023 Applied Physics Letters
More information on our research in the Research database.
Research database

Associate Professor Hele Savin
Email: hele.savin at
Tel.: +358 50 5410 156

Postal address:
Department of Electronics and Nanoengineering
Aalto University School of Electrical Engineering
P.O. Box 13500, 00076 Aalto, Finland

Visiting address:
Micronova, 4th floor, room 4156
Tietotie 3, 02150 Espoo

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