Department of Electronics and Nanoengineering

Electron Physics

The Electron Physics group is part of the Department of Electronics and Nanoengineering, Aalto University. Our research and education is focused on semiconductor materials and device physics. Our interests cover the whole scientific spectrum from fundamental physical phenomena to the search for cutting-edge applications in collaboration with leading industries. The current research activities include silicon-based photovoltaics and photodetectors, advanced characterization and nanofabrication techniques as well defect engineering in silicon. In addition to extensive facilities at Micronova Nanofabrication Centre, we use global research infrastructures in collaboration with our university and industry partners.
Hele Savin Group

Research topics

The group uses extensive clean room facitilites at Micronova Nanofabrication Centre for material research and device fabrication.

Latest publications

Role of CsMnCl3 Nanocrystal Structure on Its Luminescence Properties

Anastasia Matuhina, G. Krishnamurthy Grandhi, Fang Pan, Maning Liu, Harri Ali-Löytty, Hussein M. Ayedh, Antti Tukiainen, Jan-Henrik Smått, Ville Vähänissi, Hele Savin, Jingrui Li, Patrick Rinke, Paola Vivo 2023 ACS Applied Nano Materials

Optoelectronic properties of black silicon fabricated by femtosecond laser in ambient air: exploring a large parameter space

Behrad Radfar, Kexun Chen, Olli Setälä, Ville Vähänissi, Hele Savin, Xiaolong Liu 2023 Optics Letters

Fast Wafer-Level Characterization of Silicon Photodetectors by Photoluminescence Imaging

Hussein Ayedh, Wisa Förbom, Juha Heinonen, Ismo T. S. Heikkinen, Marko Yli-Koski, Ville Vähänissi, Hele Savin 2022 IEEE Transactions on Electron Devices

Characterization of Heavily Irradiated Dielectrics for Pixel Sensors Coupling Insulator Applications

S. Bharthuar, M. Golovleva, M. Bezak, E. Brücken, A. Gädda, J. Härkönen, A. Karadzhinova-Ferrer, N. Kramarenko, S. Kirschenmann, P. Koponen, P. Luukka, K. Mizohata, J. Ott, E. Tuominen 2022 Frontiers in materials

Effect of anode sheet resistance on rise time of black silicon induced junction photodiodes

Juha Heinonen, Antti Haarahiltunen, Ville Vähänissi, Toni P. Pasanen, Hele Savin, Mikko A. Juntunen 2022 SPIE Conference Proceedings

(oral talk) Effect of anode sheet resistance on rise time of black silicon induced junction photodiodes

Juha Heinonen, Antti Haarahiltunen, Ville Vähänissi, Toni Pasanen, Hele Savin, Mikko Juntunen 2022

(poster) Spatial uniformity of black silicon induced junction photodiode responsivity

Juha Heinonen, Antti Haarahiltunen, Ville Vähänissi, Toni Pasanen, Hele Savin, Mikko Juntunen 2022

(poster) Reduction of defect density at Ge/Al2O3 interface using GeO2 interfacial layers

Joonas Isometsä, John Fung, Toni Pasanen, Hanchen Liu, Oskari Leiviskä, Marko Yli-Koski, Ville Vähänissi, Hele Savin 2022
More information on our research in the Research database.
Research database

Contact:
Associate Professor Hele Savin
Email: hele.savin at aalto.fi
Tel.: +358 50 5410 156

Postal address:
Department of Electronics and Nanoengineering
Aalto University School of Electrical Engineering
P.O. Box 13500, 00076 Aalto, Finland

Visiting address:
Micronova, 4th floor, room 4156
Tietotie 3, 02150 Espoo

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