People

Mervi Paulasto-Kröckel

Professor

T410 Dept. Electrical Engineering and Automation

Full researcher profile

https://research.aalto.fi/...

Contact information

[email protected]

Phone number

+358505113197

Honors and awards

Best paper award

Award or honor granted for a specific work Department of Electrical Engineering and Automation Oct 2000

JVST A Best ALD Paper Award

Award for paper "Atomic layer deposition of AlN using atomic layer annealing—Towards high-quality AlN on vertical sidewalls, by Elmeri Österlund, Heli Seppänen, Kristina Bespalova, Ville Miikkulainen and Mervi Paulasto-Kröckel, JVST A 39, 032403 (2021)"

Award or honor granted for a specific work Department of Chemistry and Materials Science Jun 2021

Research groups

Electronics Integration and Reliability

Publications

Achieving low-temperature wafer level bonding with Cu-Sn-In ternary at 150 °C

Obert Golim, Vesa Vuorinen, Glenn Ross, Tobias Wernicke, Marta Pawlak, Nikhilendu Tiwary, Mervi Paulasto-Kröckel 2023 Scripta Materialia

Joint International Master in Smart Systems Integrated Solutions

Knut E. Aasmundtveit, Changhai Wang, Márta Rencz, Mervi Paulasto-Kröckel, Kristin Imenes, Marc P.Y. Desmulliez, Ferenc Ender, Vesa Vuorinen 2022 2022 IEEE 9th Electronics System-Integration Technology Conference, ESTC 2022 - Proceedings

Investigation of the microstructural evolution and detachment of Co in contact with Cu–Sn electroplated silicon chips during solid-liquid interdiffusion bonding

F. Emadi, V. Vuorinen, H. Dong, G. Ross, M. Paulasto-Kröckel 2022 Journal of Alloys and Compounds

Mervi Paulasto-Kröckel

Contact information

Honors and awards

Best paper award

JVST A Best ALD Paper Award

Research groups

Publications

Achieving low-temperature wafer level bonding with Cu-Sn-In ternary at 150 °C

Joint International Master in Smart Systems Integrated Solutions

Investigation of the microstructural evolution and detachment of Co in contact with Cu–Sn electroplated silicon chips during solid-liquid interdiffusion bonding

Low-temperature die attach for power components: Cu-Sn-In solid-liquid interdiffusion bonding

Microstructural and mechanical characterization of Cu/Sn SLID bonding utilizing Co as contact metallization layer

Utilizing Co as a contact metallization for wafer-level Cu-Sn-In SLID bonding used in MEMS and MOEMS packaging

Unlocking the Potential of Piezoelectric Films Grown on Vertical Surfaces for Inertial MEMS

Finite element simulation of solid-liquid interdiffusion bonding process

Impact of Inherent Design Limitations for Cu–Sn SLID Microbumps on Its Electromigration Reliability for 3D ICs

Demonstrating 170°C Low Temperature Cu-In-Sn wafer level Solid Liquid Interdiffusion Bonding