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Kari Halonen
Department of Electronics and Nanoengineering

Kari Halonen

Professor

Contact information

Postal address
Otakaari 5
Mobile phone
+358505113965
Full researcher profile
https://research.aalto.fi/...

Honors and awards

Award or honor granted for a specific work
Department of Electronics and Nanoengineering
Jan 2007

Best paper award at Asian Conference on Millimeter-wave circuits and Technology

Award or honor granted for a specific work
Department of Electronics and Nanoengineering
Jan 2002

Beatrice Winner Award at IEEE Solid-State Circuits Conference

Award or honor granted for a specific work
Department of Electronics and Nanoengineering
Jan 2007

Second best paper award at ECCTD Conference

Research groups

Kari Halonen Group

Publications

Department of Electronics and Nanoengineering, Kari Halonen Group

Wideband mm-Wave CMOS Slow Wave Coupler

Publishing year: 2019 IEEE Microwave and Wireless Components Letters
Kari Halonen Group, Department of Electronics and Nanoengineering

A 71–76 GHz wideband receiver front-end for phased array applications in 0.13 μm SiGe BiCMOS technology

Publishing year: 2019 Analog Integrated Circuits and Signal Processing
Centre of Excellence in Quantum Technology, QTF, Department of Electronics and Nanoengineering, Zhipei Sun Group, Kari Halonen Group, Harri Lipsanen Group

High photoresponsivity and broadband photodetection with a band-engineered WSe 2 /SnSe 2 heterostructure

Publishing year: 2019 Nanoscale
Department of Electronics and Nanoengineering, Kari Halonen Group

A write-improved low-power 12T SRAM cell for wearable wireless sensor nodes

Publishing year: 2018 International Journal of Circuit Theory and Applications
Department of Electronics and Nanoengineering, Centre of Excellence in Quantum Technology, QTF, Kari Halonen Group, Harri Lipsanen Group, Zhipei Sun Group, Department of Applied Physics

A MoSe2/WSe2 Heterojunction-Based Photodetector at Telecommunication Wavelengths

Publishing year: 2018 Advanced Functional Materials
Department of Electronics and Nanoengineering, Kari Halonen Group

Cryogenic Millimeter-Wave CMOS Low-Noise Amplifier

Publishing year: 2018 Proceedings of the 2018 IEEE/MTT-S International Microwave Symposium, IMS 2018
Department of Electronics and Nanoengineering, Kari Halonen Group

Design of an E-band Doherty Power amplifier

Publishing year: 2018 PRIME 2018 - 14th Conference on Ph.D. Research in Microelectronics and Electronics
Department of Electronics and Nanoengineering, Kari Halonen Group

Ultra-Low Power Wide-Dynamic-Range Universal Interface for Capacitive and Resistive Sensors

Publishing year: 2018 2018 IEEE International Symposium on Circuits and Systems (ISCAS) Proceedings
Department of Electronics and Nanoengineering, Kari Halonen Group

Low-Power Single-Stage Narrowband Transmitter Front-End for 433-MHz Band

Publishing year: 2018 2018 IEEE International Symposium on Circuits and Systems, ISCAS 2018 - Proceedings
Department of Electronics and Nanoengineering, Kari Halonen Group

A Fully Integrated Digitally Programmable Pulse Shaping 6.0-8.5 GHz UWB IR Transmitter Front-End for Energy Harvesting Applications

Publishing year: 2018 2018 IEEE International Symposium on Circuits and Systems (ISCAS)