Defence in the field of Semiconductor Technology M. Sc. (Tech.) Haibing Huang

Title of the thesis is “High Efficiency Industrial p-type PERC and PERT Crystalline Silicon Solar Cells: Boron Junction Doping and Surface Passivation”

The public defense will be organized via remote technology, Zoom link: 

Roadmaps for industrial silicon solar cells

At present, p-type crystalline silicon (c-Si) solar cell is the mainstream cell product in photovoltaic industry due to cost-efficiency. This thesis focuses on the study of industrially potential p-type c-Si solar cells with the aim to address several of the main issues present in PV industry. The core problems addressed here include boron junction formation as well as surface passivation. Further, the thesis explores and discusses the recombination mechanisms and cell-efficiency loss mechanisms of industrial Si solar cells. Based on the research results, the thesis explores and also proposes cost-efficient and industrial roadmaps for the industrial p-type Si solar cells. The research results can be applied to industrial n-type Si solar cells as well.

Opponent: Professor Isidro Martin, Universitat Politècnica de Catalunya, Spain

Supervisor and Custos:  Professor Hele Savin Aalto University School of Electrical Engineering, Department of Electronics and Nanoengineering.

Dissertation web page

Contact information: Haibing Huang, Department of Electronics and Nanoengineering, [email protected], +8615850677052

The dissertation is publicly displayed 10 days before the defence:

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