The goal of the project was to develop complementary metrology tools for thin film characterization. Metrology Research Institute contributed in a work package to develop multi-spectral methodologies for characterising the properties of thin-layer materials used in energy conversion technology and energy efficient lighting. The main task of Metrology Research Institute was to investigate the optical properties of the black silicon samples used in the fabrication of solar cells, etc. Other materials to investigate included indium-free transparent conducting oxide (TCO), low-e, and photothermal materials by using the facilities for performing spectral reflectometry measurements.
The key activities of Metrology Research Institute in this project are listed below.
Investigation of optical properties of the black Si samples
Metrology Research Institute generated a dataset of complete reflectometric characterisation for samples of 100-mm silicon wafers with 400 μm thickness. Most of the samples had surface passivation with conformal aluminium oxide (Al2O3) coating by atomic layer deposition (ALD).
Effect of temperature and UV irradiation induced changes on energy material parameters
Metrology Research Institute used the UV aging facility to irradiate a large selection of the samples such as black-Si, low-e, and photothermal materials and measured the effects of the UV aging on the optical and efficiency parameters of the thin film coated energy materials using spectroscopic ellipsometry at BAM. From the results datasets and a report will be written by MIKES, with input from BAM on the effects of UV aging on the optical and electronic parameters of the samples.
Contact persons: Farshid Manoocheri and Anna Vaskuri
More information about the project can be found at the project website:
 S. Pourjamal, H.Mäntynen, P. Jaanson, D. M. Rosu, A. Hertwig, F. Manoocheri, and E. Ikonen, "Characterization of thin-film thickness," Metrologia 51,S302-S308 (2014).