Sami Suihkonen

Visiting Scholar
Visiting Scholar
T410 Dept. Electrical Engineering and Automation
Full researcher profile
https://research.aalto.fi/...

Yhteystiedot

Sähköposti
[email protected]
Puhelinnumero
+358503618657

Osaamisalueet

Optoelectronics, GaN, LEDs

Tutkimusryhmät

  • Electronics Integration and Reliability, Visitor (Faculty)

Julkaisut

Metalorganic Chemical Vapor Deposition of AlN on High Degree Roughness Vertical Surfaces for MEMS Fabrication

Kristina Bespalova, Glenn Ross, Sami Suihkonen, Mervi Paulasto-Kröckel 2024 Advanced Electronic Materials

Enhanced Specific Detectivity and UV-to-Visible Rejection-Ratio of Visible-Blind Metal– Semiconductor–Metal Photodetectors, Based on Epitaxial GaN/Si(111)

Pinki Pal, Amadeep Kaur, Sami Suihkonen, Jori Lemettinen, A. Laha, Subhabrata Dhar, Suddhasatta Mahapatra 2023 IEEE Transactions on Electron Devices

Effect of atomic layer annealing in plasma-enhanced atomic layer deposition of aluminum nitride on silicon

H Seppanen, I Prozheev, C Kauppinen, S Suihkonen, K Mizohata, H Lipsanen 2023 JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY A

Impurity diffusion in ion implanted AlN layers on sapphire substrates by thermal annealing

Hironori Okumura, Yasuhiro Watanabe, Tomohiko Shibata, Kohei Yoshizawa, Akira Uedono, Hiroki Tokunaga, Shuuichi Koseki, Tadanobu Arimura, Sami Suihkonen, Tomás Palacios 2022 Japanese Journal of Applied Physics

High-Detectivity Ultraviolet Photodetectors with Epitaxial GaN on Si(111)

Pinki Pal, Bhupesh Bhardwaj, Robin Dahiya, Sami Suihkonen, Jori Lemettinen, Apurba Laha, Dinesh Kabra, Suddhasatta Mahapatra 2022 2022 IEEE International Conference on Emerging Electronics, ICEE 2022

A Highly Sensitive and Robust GaN Ultraviolet Photodetector Fabricated on 150-mm Si (111) Wafer

Ravindra Singh Pokharia, Ritam Sarkar, Shivam Singh, Swarup Deb, Sami Suihkonen, Jori Lemettinen, Subhabrata Dhar, Dinesh Kabra, Apurba Laha 2021 IEEE Transactions on Electron Devices

Epi-Gd₂O₃-MOSHEMT: A Potential Solution Toward Leveraging the Application of /Si AlGaN/GaNHEMT With Improved ION/IOFF Operating at 473 K

Ritam Sarkar, Bhanu B. Upadhyay, Swagata Bhunia, Ravindra S. Pokharia, Dhiman Nag, S. Surapaneni, Jori Lemettinen, Sami Suihkonen, Philipp Gribisch, Hans Jorg Osten, Swaroop Ganguly, Dipankar Saha, Apurba Laha 2021 IEEE Transactions on Electron Devices

MOVPE growth of GaN on patterned 6-inch Si wafer

Iurii Kim, Joonas Holmi, Ramesh Raju, Atte Haapalinna, Sami Suihkonen 2020 Journal of Physics Communications

2D electrons and 2D plasmons in AlGaN/GaN nanostructure under highly non-equilibrium conditions

L. A. Loginov, V. A. Shalygin, M. D. Moldavskaya, M. Ya Vinnichenko, D. A. Firsov, K. V. Maremyanin, A. V. Sakharov, E. E. Zavarin, D. S. Arteev, W. V. Lundin, Christoffer Kauppinen, Sami Suihkonen 2020 Journal of Physics: Conference Series

Atomic Layer Deposition of PbS Thin Films at Low Temperatures

Georgi Popov, Goran Bačić, Miika Mattinen, Toni Manner, Hannu Lindström, Heli Seppänen, Sami Suihkonen, Marko Vehkamäki, Marianna Kemell, Pasi Jalkanen, Kenichiro Mizohata, Jyrki Räisänen, Markku Leskelä, Hanna Maarit Koivula, Seán T. Barry, Mikko Ritala 2020 Chemistry of Materials