Filip Tuomisto
Institutionen för teknisk fysik

Filip Tuomisto

Professor

Kontakt information

Postadress
Puumiehenkuja 2, 02150 Espoo
Mobile phone
+358503841799
Full researcher profile
https://research.aalto.fi/...

Beskrivning

My scientific research work focuses on the fundamental connection between macroscopic properties and atomic-level structure of materials. The methodology of choice is positron annihilation spectroscopy that is particularly suitable for lattice defect characterization in solids. The power of positron spectroscopies lies in (i) the selective sensitivity to open volume structures, (ii) the possibility of studying materials of any type (conductive, insulating, hard, soft, crystalline, or porous) and (iii) the possibility of direct comparison of theoretical calculations and experimental observations. My group is is one of the world’s leading teams in developing the methodology, instrumentation, applications and theory of positron annihilation spectroscopy of semiconductor materials and devices.

Kompetensområden

Positron annihilation spectroscopy

Utmärkelser

Award or honor granted for academic career
Institutionen för teknisk fysik
Jan 2016

2016 Chevalier dans l’Ordre des Palmes Académiques Decoration issued by the French government for distinguished academics.

Award or honor granted for academic career
Institutionen för teknisk fysik
Jan 2015

2015 EspooAmbassador Awarded by the city of Espoo based on activity in the scientific community and conference organization.

Publikationer

Antimatter and Nuclear Engineering, Institutionen för teknisk fysik

Unusual properties of the RY3 center in GaN

Publishing year: 2019 Physical Review B
Institutionen för teknisk fysik, Antimatter and Nuclear Engineering

Direct observation of mono-vacancy and self-interstitial recovery in tungsten

Publishing year: 2019 APL Materials
Institutionen för teknisk fysik, Antimatter and Nuclear Engineering

Ga vacancies and electrical compensation in β-Ga 2 O 3 thin films studied with positron annihilation spectroscopy

Publishing year: 2019 Oxide-Based Materials and Devices X
Antimatter and Nuclear Engineering, Institutionen för teknisk fysik

Influence of Fermi level position on vacancy-assisted diffusion of aluminum in zinc oxide

Publishing year: 2018 Physical Review B
Institutionen för teknisk fysik, Antimatter and Nuclear Engineering

Preface

Publishing year: 2018 Journal of Crystal Growth
Antimatter and Nuclear Engineering, Institutionen för teknisk fysik

Effects of alloy composition and Si-doping on vacancy defect formation in (InxGa1- x)2O3 thin films

Publishing year: 2018 Journal of Applied Physics
Institutionen för teknisk fysik, Antimatter and Nuclear Engineering

15 years of the European Nuclear Education Network (ENEN Association)

Publishing year: 2018 2018 26th International Conference on Nuclear Engineering
Institutionen för teknisk fysik, Antimatter and Nuclear Engineering

The ENEN+ Project

Publishing year: 2018 PROCEEDINGS OF THE 26TH INTERNATIONAL CONFERENCE ON NUCLEAR ENGINEERING
Institutionen för maskinteknik, Engineering Materials, Institutionen för teknisk fysik, Antimatter and Nuclear Engineering

Hydrogen-induced strain localisation in oxygen-free copper in the initial stage of plastic deformation

Publishing year: 2018 Philosophical Magazine
Institutionen för teknisk fysik, Antimatter and Nuclear Engineering

Evaluation of the concentration of point defects in GaN

Publishing year: 2017 Scientific Reports